An Introduction of Transistor STP80NF55L-06

kate kate 08 January
An Introduction of Transistor STP80NF55L-06

General Description


STMicroelectronics proprietary "Single Feature SizeTM" strip-based technology has yielded this Power MOSFET. The resultant transistor has a high packing density for low resistance, tough avalanche properties, and fewer key alignment stages, resulting in exceptional manufacturing repeatability.




  • Drive at a low threshold

  • The device at the logic level




  • switching at high current and speed

  • drivers of solenoid and relay

  • audio amplifiers, motor control

  • converters (DC-DC & DC-AC)

  • automotive


CAD Models










3D Models






· Technical

· Operating Temperature--55°C~175°C TJ

· Series-STripFET™ II

· Moisture Sensitivity Level (MSL)-1 (Unlimited)

· Voltage - Rated DC-55V

· Technology-MOSFET (Metal Oxide)

· Current Rating-80A

· Power Dissipation-Max-300W Tc

· Power Dissipation-300W

· Fall Time (Typ)-80 ns

· Turn-Off Delay Time-135 ns

· Continuous Drain Current (ID)-80A

· Threshold Voltage-3V

· Gate to Source Voltage (Vgs)-16V

· Drain to Source Breakdown Voltage-55V




Where to Use


Common transistor applications include digital and analog switches, signal amplifiers, power conditioners, device controllers, and are also an important part of integrated circuits and modern electronic devices.


How to Use


S in the picture below refers to the source (Source), D refers to the drain (Drain), and G refers to the gate (Gate). The working principle of the transistor is actually very simple, that is, the binary "0" and "1" are represented by two states.

Between the source and the drain is the channel (Channel), when no voltage is applied to the gate (G), no effective charge will accumulate in the channel, and there is no gap between the source (S) and the drain (S). There will be effective current flow and the transistor will be turned off. This closed state can be interpreted as "0".




When a voltage is applied to the gate (G), the effective charge will accumulate in the channel, forming a conduction channel from the source (S) to the drain (D), and the transistor is turned on, as shown in the picture below, This state can be interpreted as "1". In this way, the two states of the binary are represented by the on and off states of the transistor.




Selection Skills


(1) For switching circuits, the tube with a relatively large current and small saturation pressure drop is preferred, and the withstand voltage requirements of the tube can be appropriately relaxed. Because withstand voltage and current are a pair of contradictory parameters, if you want the best of both worlds, the cost will inevitably increase. In order to enter the saturation state and avoid the situation of the continuous shutdown, in addition to selecting a good tube, it is very important to bias the line. Typically, the IB current is increased while the IC remains the same, or the IC current is decreased while the IB remains the same.


(2) For high-voltage circuits, the main consideration is that the leakage current should be small, the thermal stability should be good, and the breakdown voltage should be avoided with soft characteristics and creep. It is best to add a protection circuit.


(3) For ordinary amplification, the main consideration is that the linearity of the HFE output is better, the working area is wide, and the static working point is best to choose the test conditions of HFE, that is, the test conditions of HFE bins.


(4) For high-frequency circuits, the main consideration is the fT parameter, and it must be matched with the circuit board. The capacitance and inductance on the PCB board will affect its use.


(5) For power amplification, the main consideration is its power tolerance range, how the tube body heats up after the tube is installed, what is the ambient temperature, and whether the heat dissipation and ventilation are good. PCM=TJM-TA/RT


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