How do N-channel MOSFETs Work?
In the N-channel MOSFET, the conductivity between drain and source is accomplished by the motion of electrons. The transistor's source and drain are composed of n-type materials while the body and substrate are comprised of p-type material. When we apply Silicon dioxide onto the substrate layer, it creates the standard metal oxide semiconductor. It is known as a dielectric substance which means it can act as a capacitor in which the electrode will be replaced with the semiconductor.
If we apply a positive voltage to the MOS structure this will alter the distribution of charge in the semiconductor. When we add negative voltages, holes in the oxide layer undergo a force, allowing the holes to slide downwards. The depletion area is accumulated by a negative charge bound to the oxide layer that is related to acceptors and atoms. The high amount of free electrons in the p-type substrate boost the conductivity of the channel overall and continually alters the properties that electrically are present in a p-type substrate, which allows it to transition into n-type materials. The voltage that is applied to the gate terminal controls electrons' movement. The greater the voltage that is positive on the terminal of the gate, the more it attracts the electron, increasing the channel's path between the sources and drains. Therefore raising the potential at the gate can increase the conductivity of the transistor.
The N-Channel transistor has been designed to decrease the state resistance and provide high-quality switching performance.